www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 september 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 BCP160T high efficiency heterojunction power fet chip (.25 m x 1600 m) the berex bcp160 t is a gaas power phemt with a nominal 0. 2 5 micron gate length and 1600 micron gate width making the product ideally suited for applications where high - gain and medium power in the 1000 mhz to 26.5 ghz frequency range are required. the product may be used in either wideband (6 - 18 ghz) or narrow - ba nd applications. the BCP160T is produced using state of the art metallization with si 3 n 4 passivation and is screened to assure reliability . product features ? 33 dbm typical output power ? 1 0.5 db typical gain @ 12 ghz ? 0. 2 5 x 1 600 micron recessed gate applications ? commercial ? military / hi - rel . ? test & measurement electrical characteristic ( tuned for power ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 32.0 33.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 9.5 10.5 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 6 0 % i dss saturated drain current (v gs = 0v, v ds = 1.0v) 32 0 480 6 4 0 ma g m transconductance (v ds = 3v, v gs = 50% i dss ) 640 ms v p pinch - off voltage (i ds = 1.6 ma, v ds = 2v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i g = 1.6 ma, source open) - 15 - 1 2 v bv gs source breakdown voltage (i g = 1 . 6 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 33 c/w
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 september 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp1 6 0t electrical characteristic ( tuned for gain ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 29.5 30.5 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 ghz 10.0 11.0 db pae pae @ p 1db (vds = 8 v, ids = 50% idss) 12 ghz 40.0 % i dss saturated drain current (v gs = 0v, v ds = 1.0v) 32 0 480 6 4 0 ma g m transconductance (v ds = 3v, v gs = 50% i dss ) 640 ms v p pinch - off voltage (i ds = 1.6 ma, v ds = 2v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i gd = 1.6 ma, source open) - 15 - 1 2 v bv gs source breakdown voltage (i g = 1 .6 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 33 c/w maximum rating (t a = 25 c ) symbol parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 6 v i dss 80 ma 30 dbm 175 c - 60 c - 150 c 6.0 w 8 v - 3 v i dss 14 ma @ 3 db compression 150 c - 60 c - 150 c 5.0 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device. p in _p out /gain, pae (12 ghz) frequency = 12ghz v ds = 8 v, i ds = 50% i dss ( tune d for power) frequency = 12ghz v ds = 8 v, i ds = 50% i dss ( tune d for gain)
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 september 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp1 6 0t s - p arameters ( v ds = 8v, i ds = 50% i dss ) freq . [ g hz] s11 [ mag ] s11 [ang . ] s21 [ mag ] s21 [ang . ] s12 [ mag ] s12 [ang . ] s22 [ mag ] s22 [ang . ] 1 0.87 - 125.38 13.67 111.02 0.029 37.07 0.34 - 144.18 2 0.85 - 156.37 7.50 92.04 0.034 32.44 0.36 - 161.51 3 0.86 - 171.07 5.11 80.78 0.036 33.73 0.37 - 168.21 4 0.86 - 179.89 3.86 72.20 0.040 34.70 0.38 - 172.01 5 0.87 173.17 3.08 64.03 0.043 38.64 0.40 - 174.55 6 0.87 167.14 2.55 56.79 0.047 40.81 0.42 - 177.15 7 0.88 162.28 2.14 50.07 0.048 40.71 0.44 - 179.70 8 0.88 157.56 1.88 43.01 0.050 45.15 0.45 178.62 9 0.89 152.94 1.65 37.28 0.055 45.37 0.47 175.28 10 0.89 148.80 1.48 31.07 0.060 44.07 0.49 172.74 11 0.89 143.76 1.33 24.59 0.062 42.96 0.51 169.96 12 0.90 138.90 1.20 18.21 0.066 41.21 0.53 167.35 13 0.91 134.97 1.09 12.85 0.070 39.95 0.55 163.90 14 0.91 129.80 0.99 6.58 0.071 38.03 0.58 161.41 15 0.92 125.36 0.89 0.82 0.073 35.59 0.61 158.02 16 0.93 121.84 0.81 - 4.31 0.075 32.10 0.64 154.68 17 0.93 117.69 0.72 - 10.60 0.073 29.92 0.66 151.79 18 0.95 115.85 0.63 - 14.17 0.076 28.56 0.68 149.05 19 0.94 113.69 0.57 - 18.70 0.076 27.06 0.71 145.91 20 0.94 110.54 0.52 - 22.86 0.077 24.13 0.73 143.57 21 0.95 109.76 0.46 - 26.30 0.077 24.61 0.75 141.51 22 0.94 110.02 0.41 - 28.17 0.079 22.75 0.76 139.28 23 0.94 108.99 0.36 - 31.53 0.080 22.44 0.77 136.86 24 0.94 110.06 0.33 - 33.06 0.082 19.77 0.79 135.47 25 0.95 110.74 0.30 - 34.59 0.077 20.11 0.80 133.59 26 0.95 110.24 0.27 - 33.68 0.079 23.85 0.81 133.29 note: s - parameters include bond wires. reference planes are at edge of substrates shown on wire bonding information figure below.
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 september 2011 specifications are subject to change without notice. ? berex 2011 rev. 1.2 bcp1 6 0t wire bonding information using 1 mil . diameter, au bonding wires. 1. gate to input transmission line - length and height : 600 m x 250 m - number of wire (s) : 2 2. drain to output transmission line - length and height : 400 m x 250 m - number of wire(s) : 2 3. source to ground plate - length and height : 250 m x 300 m - number of wire(s) : 6 disclaimer berex reserves the right to make changes without further notice to any products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit descr ibed herein. life support policy berex products are not authorized for use as critical components in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for sur gical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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